Vtn = 0.5 V γ = 0.5 V^1/2 φf = 0.3 V Vsb = 0 V
Substituting typical values:
where Nc and Nv are the effective densities of states in the conduction and valence bands, respectively, Eg is the bandgap energy, k is the Boltzmann constant, and T is the temperature. Advanced Semiconductor Fundamentals Solution Manual
Ic = Is * (exp(VBE/Vt) - 1)
The built-in potential barrier in a pn junction can be calculated using the following equation: Vtn = 0